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| APTDF100H601G Fast Diode Full Bridge Power Module 3 CR1 5 6 CR2 CR4 4 CR3 1 2 VRRM = 600V IC = 100A* @ Tc = 80C Application * * * * Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features * * * * * * * Benefits * * * * * * * Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration 7 8 9 10 All multiple inputs and outputs must be shorted together 3/4 ; 5/6 ; 7/8 ; 1/2 ; 9/10 Absolute maximum ratings Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% 8.3ms TC = 25C TC = 80C TC = 45C Max ratings 600 135 * 100 * 500 A August, 2007 APTDF100H601G - Rev 0 Unit V Non-Repetitive Forward Surge Current * Specification of diode device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF100H601G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic VF IRM CT Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Test Conditions IF = 100A IF = 200A IF = 100A Tj = 125C Tj = 25C VR = 600V Tj = 125C VR = 200V Min Typ 1.6 2.0 1.3 Max 2.0 Unit V 250 500 190 A pF Dynamic Characteristics Symbol Characteristic trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current IF = 100A VR = 400V di/dt=1000A/s IF = 100A VR = 400V di/dt = 200A/s Test Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C Min Typ 160 220 290 1530 5 13 100 2890 44 Max Unit ns nC A ns nC A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 2.5 Typ Max 0.55 175 125 100 4.7 80 Unit C/W V C N.m g August, 2007 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 www.microsemi.com 2-4 APTDF100H601G - Rev 0 APTDF100H601G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage 300 IF, Forward Current (A) 250 200 150 TJ=25C TJ=125C 300 trr, Reverse Recovery Time (ns) Trr vs. Current Rate of Charge TJ=125C VR=400V 250 100 A 200 A 200 150 100 50 0 200 400 600 800 -diF/dt (A/s) 1000 1200 50 A 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 VF, Anode to Cathode Voltage (V) QRR vs. Current Rate Charge TJ=125C VR=400V 200 A QRR, Reverse Recovery Charge (C) IRRM, Reverse Recovery Current (A) 4 60 50 40 30 20 10 0 0 IRRM vs. Current Rate of Charge TJ=125C VR=400V 200 A 100 A 50 A 3 100 A 50 A 2 1 0 0 200 400 600 800 1000 1200 -diF/dt (A/s) Capacitance vs. Reverse Voltage 1400 1200 200 400 600 800 1000 1200 -diF/dt (A/s) Max. Average Forward Current vs. Case Temp. 150 125 IF(AV) (A) 100 75 50 25 0 Duty Cycle = 0.5 TJ=175C C, Capacitance (pF) 800 600 400 200 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (C) www.microsemi.com 3-4 APTDF100H601G - Rev 0 August, 2007 1000 APTDF100H601G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 4-4 APTDF100H601G - Rev 0 August, 2007 |
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